器件名称: BUZ32
功能描述: 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
文件大小: 47.24KB 共6页
简 介:BUZ32
Semiconductor
Data Sheet
October 1998
File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
Features
9.5A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.400 (BUZ32) eld effect transistor designed for applications such as SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds (9.5A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 200V, Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.400 High Input Impedance Ohm, N- Formerly developmental type TA17412. Majority Carrier Device Channel Ordering Information Related Literature Power - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND MOSComponents to PC Boards” BUZ32 TO-220AB BUZ32 FET) /Author NOTE: When ordering, use the entire part number. Symbol () D /Keywords G (Harris SemiS conductor, NChannel Power Packaging MOSJEDEC TO-220AB FET, TOSOURCE DRAIN 220AB) GATE /Creator DRAIN (FLANGE) () /DOCIN FO pdfmark
[ /PageMode /UseOutlines /DOCVIEW pdfmark
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright Harris Corporation 1998
BUZ32
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied BUZ32 200 200 9.5 38 ±20 75 150 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V……
