器件名称: BUZ45
功能描述: 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET
文件大小: 12.11KB 共1页
简 介:BUZ45
Semiconductor
Data Sheet
October 1998
File Number 2257.1
9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET
Features
9.6A, 500V
[ /Title IThis is an N-Channel enhancement mode silicon gate rDS(ON) = 0.600 (BUZ45) power eld effect transistor designed for applications such SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds (9.6A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 500V, Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.600 High Input Impedance Ohm, N- Formerly developmental type TA17435. Majority Carrier Device Channel Ordering Information Power Symbol PART NUMBER PACKAGE BRAND MOSD BUZ45 TO-204AA BUZ45 FET) /Author NOTE: When ordering, use the entire part number. G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-204AA Channel Power DRAIN MOS(FLANGE) FET. TO204AA) /Creator () SOURCE (PIN 2) /DOCIN GATE (PIN 1) FO pdfmark
[ /PageMode /UseOutlines /DOCVIEW pdfmark
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright Harris Corporation 1998
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