器件名称: BUZ71
功能描述: 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
文件大小: 48.9KB 共6页
简 介:BUZ71
Data Sheet June 1999 File Number 2418.2
14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power eld effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9770.
Features
14A, 50V rDS(ON) = 0.100 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER BUZ71 PACKAGE TO-220AB BRAND BUZ71
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
11
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
BUZ71
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied BUZ71 50 50 14 56 ±20 40 0.32 100 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC mJ oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . .……
