器件名称: C0810
功能描述: CMOS 0.8mm High-Resistance Poly for Analog
文件大小: 30.24KB 共2页
简 介: ISO 9001 Registered
Process C0810
CMOS 0.8 m High-Resistance Poly for Analog
Electrical Characteristics
T=25oC Unless otherwise noted
N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Field Oxide Thickness Bottom Poly Sheet Res. Gate Poly Sheet Resistance Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness High Resistance Poly Capacitance Gate Oxide Metal-1 to Poly1 Metal-1 to Silicon Metal-2 to Metal-1 Poly-1 to Poly-2 Symbol VTN γN βN LeffN WN BVDSSN VTFP(N) Symbol VTP γP βP LeffP WP BVDSSP VTFP(P) Symbol ρN-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TFIELD ρPOLY1 ρPOLY2 ρM1 ρM2 TPASS ρHI-POLY Symbol COX CM1P CM1S CMM CPP Minimum 0.6 75 Typical 0.8 0.74 94 0.8 0.3 13 17 Typical – 0.9 0.57 31 0.85 0.4 –12 –17 Typical 0.65 60 0.25 90 0.4 17.5 700 23 23 60 30 200+900 2.0 Typical 1.97 0.046 0.028 0.038 0.822 Maximum 1.0 115 Unit V V1/2 A/V2 m m V V Unit V V1/2 A/V2 m m V V Unit K/ / m / m nm nm / / m/ m/ nm K/ Unit fF/m2 fF/m2 fF/m2 fF/m2 fF/m2 Comments 100x0.8m 100x0.8m 100x100m 100x0.8m Per side
7 10 Minimum – 0.7 25
Maximum –1.1 37
Comments 100x0.8m ……
