器件名称: BTA08-600B
功能描述: Bi-Directional Triode Thyristor
文件大小: 660.26KB 共6页
简 介:Preliminary
SemiWell Semiconductor Bi-Directional Triode Thyristor
Symbol
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BTA08-600B
UL : E228720
2.T2
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) TO-220F
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3.Gate
1.T1
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General Description
This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc.
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Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition Ratings
600 TC = 89 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 8.0 80/88 32 5.0 0.5 2.0 10 A.C. 1 minute 1500 - 40 ~ 125 - 40 ~ 150 2.0
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V V °C °C g
Mar, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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BTA08-600B
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage……
