器件名称: BUZ171
功能描述: SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
文件大小: 189.96KB 共9页
简 介:BUZ 171
SIPMOS Power Transistor
P channel Enhancement mode Avalanche rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 171
VDS
-50 V
ID
-8 A
RDS(on)
0.3
Package TO-220 AB
Ordering Code C67078-S1450-A2
Maximum Ratings Parameter Continuous drain current Symbol Values -8 Unit A
ID IDpuls
-32
TC = 30 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
EAS
70
mJ
ID = -8 A, VDD = -25 V, RGS = 25 L = 1.1 mH, Tj = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 40
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 3.1 ≤ 75 E 55 / 150 / 56
°C K/W
Semiconductor Group
1
07/96
BUZ 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
-50 -3 -0.1 -10 -10 0.25 -4
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
-1 -100
A
VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
-100
nA 0.3
VGS = -20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = -10 V, ID = -5 A
Semiconductor Group
2
07/96
BUZ 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter ……
