器件名称: BUZ310
功能描述: SIPMOS Power Transistor (N channel Enhancement mode)
文件大小: 240.01KB 共9页
简 介:BUZ 310
SIPMOS Power Transistor
N channel Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 310
VDS
1000 V
ID
2.5 A
RDS(on)
5
Package TO-218 AA
Ordering Code C67078-A3101-A2
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V
VDS VDGR ID
RGS = 20 k
Continuous drain current
A 2.5
TC = 25 °C
Pulsed drain current
IDpuls
10
TC = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 78
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.6 75 C 55 / 150 / 56 K/W
Semiconductor Group
1
07/96
BUZ 310
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
1000 3 20 100 10 4.5 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
250 1000
A
VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA 5
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 1.5 A
Semiconductor Group
2
07/96
BUZ 310
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconducta……
