器件名称: BUZ334
功能描述: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
文件大小: 221.88KB 共9页
简 介:BUZ 334
SIPMOS Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 334
VDS
600 V
ID
12 A
RDS(on)
0.5
Package TO-218 AA
Ordering Code C67078-S3130-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A
ID IDpuls
48
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
12 18 mJ
ID = 12 A, VDD = 50 V, RGS = 25 L = 11.8 mH, Tj = 25 °C
Gate source voltage Power dissipation 930
VGS Ptot
± 20 180
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 0.7 75 E 55 / 150 / 56
°C K/W
1
07/96
BUZ 334
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
600 3 0.1 10 10 0.45 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
A
VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA 0.5
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 7.5 A
Semiconductor Group
2
07/96
BUZ 334
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