器件名称: BUZ350
功能描述: SIPMOS Power Transistor
文件大小: 98.1KB 共8页
简 介:SIPMOS Power Transistor
BUZ 350
N channel Enhancement mode Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
200 V
ID
22 A
RDS(on)
0.12
Package
Ordering Code
BUZ 350
TO-218 AA
C67078-S3117-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 33 C
ID
A 22
Pulsed drain current
TC = 25 C
IDpuls
88
IAR EAR EAS
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
ID = 22 A, VDD = 50 V, RGS = 25 L = 1.39 mH, Tj = 25 C
22 12 mJ
450
VGS Ptot
Gate source voltage Power dissipation
TC = 25 C
± 20
125
V W
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150
C
≤1
75 E 55 / 150 / 56
K/W
Data Sheet
1
05.99
BUZ 350
Electrical Characteristics, at Tj = 25C, unless otherwise specified
Parameter
Symbol min.
Values typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 C
V (BR)DSS
V 200 -
Gate threshold voltage
VGS=VDS, ID = 1 mA
V GS(th)
2.1
IDSS
3
4 A
Zero gate voltage drain current
VDS = 200 V, V GS = 0 V, Tj = 25 C VDS = 200 V, V GS = 0 V, Tj = 125 C
IGSS
0.1 10
1 100 nA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
VGS = 10 V, ID = 14 A
0.09 0.12
Data Sheet
2
05.99
BUZ 350
E……
