器件名称: BUZ907
功能描述: POWER MOSFETS FOR AUDIO APPLICATIONS
文件大小: 25.89KB 共2页
简 介:MAGNA
TEC
25.0
+0.1 -0.15
BUZ907 BUZ908
MECHANICAL DATA Dimensions in mm
P–CHANNEL POWER MOSFET
8.7 Max. 1.50 Typ. 11.60 ± 0.3
10.90 ± 0.1
POWER MOSFETS FOR AUDIO APPLICATIONS
30.2 ± 0.15
20 M ax.
39.0 ± 1.1
16.9 ± 0.15
1
2
1.0
FEATURES
HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING
R 4.0 ± 0.1
R 4.4 ± 0.2
ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY N–CHANNEL BUZ902 & BUZ903 Case – Source
TO–3
Pin 1 – Gate Pin 2 – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ907 -220V ±14V -8A -8A 125W –55 to 150°C 150°C 1°C/W BUZ908 -250V
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
MAGNA
TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* RDS(on)*
BUZ907 BUZ908
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
BUZ907 BUZ908 IG = ±100A ID = -100mA ID = -8A ID = -8A VDS = -220V IDSX Drain – Source Cut–Off Current VGS = 10V BUZ907 VDS = -250V BUZ908 yfs* Forward Transfer Admittance VDS = -10V ID = -3A 0.7 2 S -10 mA ID = -10mA Gate – Source Breakdown Voltage VDS = 0 Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage Static – Source Resistance VDS = ……
