器件名称: BZX9V1
功能描述: SILICON EPITAXIAL PLANAR TYPE
文件大小: 105.01KB 共3页
简 介:ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj TStg Value 500 175 -65~175 Unit mW C C Type Color Code
0.5Max
DO-35 Black
Marking
Example:
COS
6V8
Zener Voltage at 6.8V normal
Cathode Mark
TEL:(852) 23413351 FAX:(852)27978275 WEB SITE:http://www.daiwahk.com
26.0Min
Absolute Maximum Rating
3.9Max
ELECTRICAL CHARACTERISTICS(Ta=25 C)
Zener Volage at Iz=5mA Vz(v) MAX. MIN. BZX2V0 BZX2V2 BZX2V4 BZX2V7 BZX3V0 BZX3V3 BZX3V6 BZX3V9 BZX4V3 BZX4V7 BZX5V1 BZX5V6 BZX6V2 BZX6V8 BZX7V5 BZX8V2 BZX9V1 BZX10 BZX11 BZX12 BZX13 BZX15 BZX16 BZX18 BZX20 BZX22 BZX24 BZX27 BZX30 BZX33 BZX36 BZX39
Note:
1. Zener Voltage is measured 40ms after electricity charging. 2. Data valid provided that leads are kept at ambient temperature at a distance of 8mm from case. VF=1V MAX (at IF=100mA) 3. Special Voltage accuracy will be provided upon request at different pricing.
TEL:(852) 23413351 FAX:(852)27978275 WEB SITE:http://www.daiwahk.com
Dynamic resistance at Iz=5mA f=1KHz Rzj(W) MAX. 100 100 100 110 120 120 120 120 120 100 70 40 30 25 25 20 20 20 20 25 25 25 25 30 30 30 35 45 55 65 75 85 at Iz=5mA f=1KHz Rzj(W) MAX. 1000 1000 1000 1000 1000 1000 1100 1200 1200 1200 1200 900 500 150 120 120……
