器件名称: D1053
功能描述: METAL GATE RF SILICON FET
文件大小: 17.14KB 共2页
简 介:TetraFET
D1053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B B A A K
D
E
C (2 pls) 2 1
3
4 5
9 8
7 6
O (2 pls)
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 50W – 28V – 1GHz PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
F
G
H
J
I
M
N
SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE
DB
PIN 1 PIN 3 PIN 5 PIN 7 PIN 9 SOURCE (COMMON) DRAIN 2 DRAIN 4 GATE 3 GATE 1 DIM A B C D E F G H I J K M N O mm 1.52 1.52 45° 16.38 6.35 18.41 12.70 5.08 24.76 1.52 0.81R 0.13 2.16 1.65R PIN 2 PIN 4 PIN 6 PIN 8 DRAIN 1 DRAIN 3 GATE 4 GATE 2
Tol. 0.13 0.13 5° 0.26 0.13 0.13 0.26 0.13 0.13 0.13 0.13 0.02 0.13 0.13
Inches 0.060 0.060 45° 0.645 0.250 0.725 0.500 0.200 0.975 0.060 0.032R 0.005 0.085 0.065R
Tol. 0.005 0.005 5° 0.010 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.001 0.005 0.005
HIGH GAIN – 7.5 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS from 400 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 175W 70V ±20V 5A –65 to 150°C 200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
D1053UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS VGS(th) gfs Drain–Source Breakdown Voltage Zero Gate Volta……
