器件名称: FPD1050_1
功能描述: 0.75W POWER PHEMT
文件大小: 149.32KB 共3页
简 介:FPD1050
0.75W POWER PHEMT
FEATURES:
28.5 dBm Linear O/p Power at 12 GHz 11 dB Power Gain at 12 GHz 14 dB Maximum Stable Gain at 12 GHz 41 dBm Output IP3 45% Power-Added Efficiency
Datasheet v3.0
LAYOUT:
GENERAL DESCRIPTION:
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 1050 m Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD1050 is also available in the low cost plastic SOT89 package.
TYPICAL APPLICATIONS:
Narrowband and broadband highperformance amplifiers SATCOM uplink transmitters PCS/Cellular low-voltage high-efficiency output amplifiers Medium-haul digital radio transmitters
ELECTRICAL SPECIFICATIONS1:
PARAMETER
Power at 1dB Gain Compression Maximum Stable Gain (S21/S12) Power Gain at P1dB Power-Added Efficiency Output Third-Order Intercept Point IP3 (from 15 to 5 dB below P1dB) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (see Notes) IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| θJC Matched for optimal power; Tuned for best IP3 VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 1 mA I……
