器件名称: FPD6836_1
功能描述: 0.25W POWER PHEMT
文件大小: 142.21KB 共3页
简 介:FPD6836
0.25W POWER PHEMT
FEATURES:
25.5 dBm Output Power (P1dB) 10 dB Power Gain at 12 GHz 16.5 dB Max Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 24 GHz 50% Power-Added Efficiency 8V Operation
Datasheet v3.0
LAYOUT:
GENERAL DESCRIPTION:
The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 360 m Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
TYPICAL APPLICATIONS:
Narrowband and broadband highperformance amplifiers SATCOM uplink transmitters PCS/Cellular low-voltage high-efficiency output amplifiers Medium-haul digital radio transmitters
ELECTRICAL SPECIFICATIONS1:
PARAMETER
Power at 1dB Gain Compression Power Gain at P1dB Power-Added Efficiency Maximum Stable Gain (S21/S12) f = 12 GHz f = 24 GHz Saturated Drain-Source Current Maximum Drain-Source Current IDSS IMAX
SYMBOL
P1dB G1dB PAE MSG
CONDITIONS
VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS POUT = P1dB
MIN
24.5 9.0
TYP
25.5 10.0 50
MAX
UNITS
dBm dB %
VDS = 8 V; IDS = 50% IDSS
15.5 11.0
16.5 12.0 110 215 135
dB
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.36 mA IGS = 0.36 mA IGD = 0.36 mA VDS > 3V
90
mA mA
Transconductance Gate-Source Leakag……
