器件名称: DP500F
功能描述: PNP Silicon Transistor
文件大小: 250.63KB 共4页
简 介:Semiconductor
DP500F
PNP Silicon Transistor
Description
Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with DN500 Switching Application
Ordering Information
Type NO. DP500F Marking P5 Package Code SOT-89
Outline Dimensions
3.70~4.30 1.50 Typ. 2.40~2.70 1.20 Max.
unit : mm
3
4.40~4.70 1.87 Max.
4
2
0.58 Max.
1
0.48 Max.
1.40~1.70
1.50 Typ.
PIN Connections 1. Base 2. Collector 3. Emitter
0.10 Max.
KST-8014-004
0.46 Max.
1
DP500F
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC PC
*
Ratings
-15 -12 -5 -5 0.5 2 150 -55~150
Unit
V V V A W °C °C
TJ Tstg
* : When mounted on 40×40×0.8 ㎜ ceramic substate
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1
*
Test Condition
IC=-50 , IE=0 IC=-1 , IB=0 IE=-50 , IC=0 VCB=-12V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100 VCE=-1V, IC=-3A IC=-3A, IB=-150 IC=-3A, IB=-150 VCB=-5V, IC=-500 VCB=-10V, IE=0, f=1
Min. Typ. Max.
-15 -12 -5 120 40 150 -1 -1 700 -0.5 -1.2 50
Unit
V V V
V V
……
