器件名称: GE28F128L30B110
功能描述: 1.8 Volt Intel StrataFlash
文件大小: 1404.25KB 共100页
简 介:1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O (L30)
28F640L30, 28F128L30, 28F256L30
Datasheet
Product Features
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High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable WAIT configuration — Buffered Enhanced Factory Programming (Buffered EFP): 3.5 s/byte (Typ) — 1.8 V low-power buffered and non-buffered programming @ 10 s/byte (Typ) ■ Architecture — Asymmetrically-blocked architecture — Multiple 8-Mbit partitions: 64Mb and 128Mb devices — Multiple 16-Mbit partitions: 256Mb devices — Four 16-KWord parameter blocks: top or bottom configurations — 64K-Word main blocks — Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE) — Status register for partition and device status ■ Power — 1.7 V - 2.0 V VCC operation — I/O voltage: 2.2 V - 3.3 V — Standby current: 30 A (Typ) — 4-Word synchronous read current: 17 mA (Typ) @ 54 MHz — Automatic Power Savings (APS) mode
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Software — 20 s (Typ) program suspend — 20 s (Typ) erase suspend — Intel Flash Data Integrator (FDI) optimized — Basic Command Set (BCS) and Extended Command Set (ECS) compatible — Common Flash Interface (CFI) capable ■ Security
— OTP space:
— 64 unique device identifier bits — 64 user-programmable OTP bits — Additional 2048 user-programmable OTP bits — Absolute write protection: VPP = GND — Power-tr……
