器件名称: BUZ100SL-4
功能描述: SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated
文件大小: 89.59KB 共8页
简 介:Preliminary data
BUZ 100SL-4
SIPMOS Power Transistor
Quad-channel Enhancement mode Logic level Avalanche-rated dv/dt rated
Type BUZ 100SL-4
VDS
55 V
ID
7.4 A
RDS(on)
0.023
Package P-DSO-28
Ordering Code C67078-S. . . .- . .
Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 7.4 Unit A
ID IDpuls
29.6
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
EAS
380 dv/dt 6
mJ
ID = 7.4 A, VDD = 25 V, RGS = 25 L = 13.8 mH, Tj = 25 °C
Reverse diode dv/dt kV/s
IS = 7.4 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 °C
Gate source voltage Power dissipation ,one channel active
VGS Ptot
± 14 2.4
V W
TA = 25 °C
Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1
Tj Tstg
-55 ... + 175 -55 ... + 175 55 / 175 / 56
°C
Semiconductor Group
1
01/Oct/1997
Preliminary data
BUZ 100SL-4
Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. max. tbd 62.5 K/W Unit
RthJS RthJA
-
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70m thick) copper area for Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
55 1.6 0.1 10 0.019 2
V
VGS = 0 V, ID = 0.25 mA, Tj =……
