器件名称: BUZ101
功能描述: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
文件大小: 185.1KB 共9页
简 介:BUZ 101
SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175°C operating temperature also in TO-220 SMD available Pin 1 G Type BUZ 101 Pin 2 D Pin 3 S
VDS
50 V
ID
29 A
RDS(on)
0.06
Package TO-220 AB
Ordering Code C67078-S1350-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 29 Unit A
ID IDpuls
116
TC = 31 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
EAS
70 dv/dt 6
mJ
ID = 29 A, VDD = 25 V, RGS = 25 L = 83 H, Tj = 25 °C
Reverse diode dv/dt kV/s
IS = 29 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 100
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175 ≤ 1.5 ≤ 75 E 55 / 175 / 56
°C K/W
Semiconductor Group
1
07/96
BUZ 101
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
50 3 0.1 1 10 10 0.036 4 1 100 100 100
V
VGS = 0 V, ID = 0.25 mA, Tj = -40 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
A nA A nA 0.06
VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
IGS……
