器件名称: CMP0417AA8-I
功能描述: 256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
文件大小: 188.09KB 共9页
简 介:CMP0417AA8-I
Document Title
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History Revision No.
0.0 0.1 0.2 0.3 Initial Draft Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions Removed 60ns descriptions Added Power Up Sequence
History
Draft date
May. 2nd, 2004 Oct. 26th, 2005 Aug. 22nd, 2006 Sep. 6th, 2006
Remark
Final Final Final Final
1
Revision 0.3 Sep. 2006
CMP0417AA8-I
FEATURES Process Technology : Full CMOS
Organization : 256K x 16 Power Supply Voltage : 2.7~3.3V Three state output and TTL Compatible Package Type : 48-FBGA-6.00x8.00 mm2 Separated I/O power(VCCQ) & Core Power(VCC) Automatic power-down when deselected
CMOS LPRAM
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
PRODUCT FAMILY
Operating Temperature Operating Voltage (V) Speed Min. Typ. Max. CMP0417AA8-F70I Industrial (-40~85’C) 2.7 3.0 3.3 70ns Typ. 1.5mA Power Dissipation ICC1 f = 1MHz Max. 3mA ICC2 f = fmax Typ. 12mA Max. 20mA ISB1 (CMOS Standby Current) Typ. 30uA Max. 70uA
Product Family
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
PIN DESCRIPTION
1 2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
A B C D E F G H
/LB I/O9
/OE /UB
A0 A3
A1 A4
A2 /CS
NC I/O1
Clk gen.
VCC VSS Memory array
I/O10 VSS
I/O11 I/O12
A5 A17
A6 A7 A16
I/O2 I/O4 I/O5
I/……
