器件名称: CMP0817BA2
功能描述: 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
文件大小: 215.29KB 共12页
简 介:CMP0817BAx-E
Document Title
512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History Revision No.
0.0 0.1 0.2 0.3 Initial Draft Add tCP=10ns in AC characteristics Minor Changes Minor Changes Modified functional description & MRS update timing Minor Changes Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions Removed the MRS DPD function Minor Changes Removed 60ns part descriptions
History
Draft date
Dec. 22nd, 2003 Mar. 10th, 2004 Jul. 6th, 2004 Nov. 8th, 2004
Remark
Preliminary Final Final Final
0.4
Oct. 26th, 2005
Final
0.5
Aug. 22nd, 2006
Final
1
Revision 0.5 Aug. 2006
CMP0817BAx-E
FEATURES Process Technology : Full CMOS
Organization : 512K x 16 Power Supply Voltage : 2.7~3.3V Low Power & Page Modes
CMP0817BA1 : support the PASR function CMP0817BA2 : support the DPD function CMP0817BA4 : support the PASR/PAGE function CMP0817BA5 : support the DPD/PAGE function
CMOS LPRAM
512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Three state output and TTL Compatible Package Type : 48-FBGA-6.00x8.00 mm2 Separated I/O power(VCCQ) & Core Power(VCC) Page read/write operation up to 16 words
(CMP0817BA4, CMP0817BA5)
DPD mode when /ZZ goes low
(CMP0817BA2, CMP0817BA5)
PRODUCT FAMILY
Operating Temperature Operating Voltage (V) Speed Min. Typ. Max. CMP0817BAx-F70E Extended (-25~85’C) 2.7 3.0 3.3 70ns Typ. 1.5mA Power Dissipation ICC1 f = 1MHz Max. 3mA ICC2 f = fmax Typ. 12mA Max. 20mA ISB1 (CMOS Standby Current) Typ……
