器件名称: SI1034X
功能描述: N-Channel 20-V (D-S) MOSFET
文件大小: 40.43KB 共4页
简 介:Si1034X
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
5 @ VGS = 4.5 V 20 7 @ VGS = 2.5 V 9 @ VGS = 1.8 V 10 @ VGS = 1.5 V
ID (mA)
200 175 150 50
1.5V Rated
FEATURES
D D D D D D Low-Side Switching Low On-Resistance: 5 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns (typ) 1.5-V Operation Gate-Source ESD Protection
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers
SC-89
S1 1 6 D1
G1
2
5
G2
Marking Code: L
D2
3
4
S2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb TA = 25_C TA = 85_C ID IDM IS TA = 25_C TA = 85_C PD TJ, Tstg ESD 450 280 145 –55 to 150 2000
Symbol
VDS VGS
5 secs
20
Steady State
Unit
V
"5 190 140 650 380 250 130 180 130
mA
Continuous Source Current (diode conduction) Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71427 S-03201—Rev. A, 12-Mar-01
mW _C V
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Si1034X
Vishay Siliconix
New Pro……
