器件名称: CZT3019
功能描述: NPN SILICON TRANSISTOR
文件大小: 92.51KB 共2页
简 介:CZT3019
NPN SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC ICM PD TJ,Tstg ΘJA UNITS V V V A A W
oC oC/W
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
120 80 7.0 1.0 1.5 2.0 -65 to +150 62.5
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCB=90V VEB=5.0V IC=100A IC=30mA IE=100A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VCE=10V, IC=0.1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=10V, IC=1.0A MIN MAX 10 10 UNITS nA nA V V V V V V
120 80 7.0 0.2 0.5 1.1 50 90 100 50 15
300
306
SYMBOL fT Cob Cib NF
TEST CONDITIONS MIN VCE=10V, IC=50mA, f=1.0MHz 100 VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=100A, RS=1k, f=1.0kHz
MAX 12 60 4.0
UNITS MHz pF pF dB
All dimensions in inches (mm).
LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER COLLECTOR
R2
307
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