器件名称: CZT3904NPN
功能描述: COMPLEMENTARY SILICON TRANSISTORS
文件大小: 94.4KB 共2页
简 介:CZT3904 NPN CZT3906 PNP
COMPLEMENTARY SILICON TRANSISTORS
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CZT3904, CZT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA CZT3904 60 40 6.0 200 2.0 -65 to +150 62.5 CZT3906 40 40 5.0 UNITS V V V mA W
oC oC/W
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) CZT3904 MIN MAX 50 60 40 6.0 0.20 0.30 0.65 0.85 0.95 40 70 100 300 60 30 CZT3906 MIN MAX 50 40 40 5.0 0.25 0.40 0.65 0.85 0.95 60 80 100 300 60 30
SYMBOL ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE
TEST CONDITIONS VCE=30V, VEB=3.0V IC=10A IC=1.0mA IE=10A IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA
UNITS nA V V V V V V V
308
SYMBOL fT Cob Cib hie hre hfe hoe NF td tr ts tf
CZT3904 TEST CONDITIONS MIN MAX VCE=20V, IC=10mA, f=100MHz 300 VCB=5.0V, IE=0, f=1.0MHz 4.0 VBE=0.5V, IC=0, f=1.0MHz 8.0 VCE=10V, IC=1.0mA, f=1.0kHz 1.0 10 VCE=10V, IC=1.0mA, f=1.0kHz 0.5 8.0 VCE=10V, IC=1.0mA, f=1.0……
