器件名称: CZT5338
功能描述: NPN SILICON POWER TRANSISTOR
文件大小: 101.59KB 共2页
简 介:CZT5338
NPN SILICON POWER TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
POWER
TM
223
The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high current amplification and switching capability.
SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC IB PD TJ,Tstg ΘJA UNITS V V V A A W
oC oC/W
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
100 100 6.0 5.0 1.0 2.0 -65 to +150 62.5
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO ICEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=100V VBE=6.0V VCE=90V IC=50mA IC=2.0A, IB=200mA IC=5.0A, IB=500mA IC=2.0A, IB=200mA IC=5.0A, IB=500mA VCE=2.0V, IC=500mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=5.0A MIN MAX 10 100 100 0.7 1.2 1.2 1.8 30 30 20 120 UNITS A A A V V V V V
100
312
SYMBOL fT Cob Cib td tr ts tf
TEST CONDITIONS VCE=10V, IC=500mA, f=10MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA VCC=40V, IC=2.0A, IB1=IB2=200mA VCC=40V, IC=2.0A, IB1=IB2=200mA
MIN 30
MAX 250 1000 100 100 2.0 200
UNITS MHz pF pF ns ns s ns
All dimensions in inches (mm).
LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER CO……
