器件名称: CZT5551E
功能描述: ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
文件大小: 152KB 共2页
简 介:CZT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING CODE: FULL PART NUMBER
SOT-223 CASE APPLICATIONS: General purpose switching and amplification Telephone applications
FEATURES: High Collector Breakdown Voltage 250V Low Leakage Current 50nA Max Low Saturation Voltage 100mV Max @ 50mA Complementary Device CZT5401E SOT-223 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA
250 220 6.0 600 2.0 -65 to +150 62.5
UNITS V V V mA W °C °C/W
SYMBOL ICBO ICBO
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 250 220 6.0
MAX 50 50 50
UNITS nA μA nA V V V
BVCBO BVCEO VCE(SAT) VCE(SAT)
VBE(SAT) VBE(SAT) BVEBO
IEBO
75 100 1.00 1.00
mV mV V V
Enhanced Specification
R0 (10-May 2006)
Central
TM
CZT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
Semiconductor Corp.
SYMBOL
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise n……