器件名称: CZT5551HC
功能描述: SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR
文件大小: 127.75KB 共2页
简 介:CZT5551HC SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 62.5 °C °C/W SYMBOL VCBO VCEO VEBO IC PD 180 160 6.0 1.0 2.0 UNITS V V V A W
SYMBOL ICBO ICBO IEBO
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100A IC=1.0mA IE=10A IC=10mA, IB=1.0mA IC=50mA, IC=10mA, IB=5.0mA IB=1.0mA 180 160 6.0
MAX 50 50 50
UNITS nA A nA V V
BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT)
0.15 0.20 1.00 1.00
V V V V V
IC=50mA, IB=5.0mA
R0 (28-January 2005)
Central
SYMBOL hFE hFE hFE hFE fT Cob
TM
CZT5551HC SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=5.0V, VCE=5.0V, IC=1.0mA IC=10mA 80 80 30
TYP
MAX
UNITS
250 10
VCE=5.0V, IC=50mA VCE=10V, IC=1.0A VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz
100 15
MHz pF
SOT-223 CASE - MECHANICAL OUTLINE
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