器件名称: CZT853
功能描述: SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR
文件大小: 92.6KB 共2页
简 介:CZT853 SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: FULL PART NUMBER
SOT-223 CASE
PNP complement: CZT953
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 41.7 °C °C/W SYMBOL VCBO VCEO VEBO IC PD 200 100 6.0 6.0 3.0 UNITS V V V A W (Note 1)
SYMBOL ICBO ICER ICBO IEBO BVCBO BVCER BVCEO BVEBO
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=150V VCE=150V, RBE ≤ 1k VCB=150V, TA=100°C VEB=6.0V IC=100μA IC=10mA, RBE ≤ 1k IC=10mA IE=100μA IC=100mA, IB=5mA IC=2.0A, IB=100mA IC=5.0A, IB=500mA IC=5.0A, IB=500mA 200 200 100 6.0
TYP
MAX 10 10 1.0 10
UNITS nA nA μA nA V V V V
220 210 110 8.0 22 135 50 170 340 1.25
VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT)
mV mV mV V
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)
R1 (30-January 2006)
Central
TM
CZT853 SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR
Semiconductor Corp.
SYMBOL hFE hFE hFE hFE fT Cob
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=2.0V, VCE=2.0V,……
