器件名称: E1010
功能描述: HEXFET Power MOSFET
文件大小: 207.72KB 共3页
简 介:E 1010
HEXFET
z z z z z z Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
Power MOSFET
VDSS = 60V ID = 84A RDS(ON) =13mΩ
Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance
Pin1–Gate Pin2–Drain Pin3–Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C
Max.
Units
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ① Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current① Repetitive Avalanche Energy① Peak Diode Recovery dv/dt . ③ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
84.⑦ 59 330 170 1.4 ± 20 50 17 4.0 -55 to + 175 °C 300 (1.6mm from case ) 10 lbfin (1.1Nm) W W/°C V A mJ V/ns A
IDM
PD @TC = 25°C
VGS IAR EAR
dv/dt
TJ TSTG
1
HE……
