器件名称: FDN340
功能描述: Single P-Channel, Logic Level, PowerTrench MOSFET
文件大小: 273.55KB 共8页
简 介:FDN340P
December 1999
FDN340P
Single P-Channel, Logic Level, PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: Load switching and power management, battery charging circuits, and DC/DC conversion.
Features
–2 A, 20 V. RDS(ON) = 0.07 @ V GS = –4.5 V RDS(ON) = 0.11 @ V GS = –2.5 V. RDS(ON) = 0.210 @ V GS = –1.8 V.
Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.
D
0 34
D
SuperSOT -3
G
TM
S
G
S
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
T A=25oC unless otherwise noted
Parameter
Ratings
–20 ±8
(Note 1a)
Units
V V A
–2 –10 0.5 0.46 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
W °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Marking and Ordering Information
Device Marking 340
1999 Fairchild Semiconductor C……
