器件名称: FDN352AP_0508
功能描述: Single P-Channel, PowerTrench MOSFET
文件大小: 123.56KB 共5页
简 介:FDN352AP Single P-Channel, PowerTrench MOSFET
August 2005
FDN352AP Single P-Channel, PowerTrench MOSFET
Features
■ –1.3 A, –30V –1.1 A, –30V RDS(ON) = 180 m @ VGS = –10V RDS(ON) = 300 m @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
Applications
■ Notebook computer power management
D D
S G G S
SuperSOT-3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS VGSS ID PD TJ, TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a)
Parameter
Ratings
–30 ±25 –1.3 –10 0.5 0.46 –55 to +150
Units
V V A
W °C °C/W
Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75
Package Marking and Ordering Information
Device Marking
52AP
Device
FDN352AP
Reel Size
7……
