器件名称: FDN360P
功能描述: Single P-Channel PowerTrenchTM MOSFET
文件大小: 231.67KB 共8页
简 介:FDN360P
February 1999
FDN360P
Single P-Channel PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
-2 A, -30 V. RDS(on) = 0.080 @ VGS = -10 V RDS(on) = 0.125 @ VGS = -4.5 V.
Low gate charge (5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications
DC/DC converter Load switch Motor drives
D
D
S
SuperSOT -3
TM
G
TA = 25°C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
-30 ±20
(Note 1a)
Units
V V A W °C
-2 -20 0.5 0.46 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
360
Device
FDN360P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDN360P Rev. D
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