器件名称: FDS2170N3
功能描述: 200V N-Channel PowerTrench
文件大小: 201.14KB 共6页
简 介:FDS2170N3
May 2003
FDS2170N3
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
3.0 A, 200 V. RDS(ON) = 128 m @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching, low gate charge (26nC typical) FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
Synchronous rectifier DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
200 ± 20
(Note 1a)
Units
V V A W °C
3.0 20 3.0 1.8 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W
Package Marking and Ordering Information
Device Marking FDS2170N3 Device FDS2170N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS2170N3 Rev B1W)
FDS2170N3
Electri……
