器件名称: FDS2670
功能描述: 200V N-Channel PowerTrench MOSFET
文件大小: 339.53KB 共8页
简 介:FDS2670
June 2000 PRELIMINARY
FDS2670
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
3.0 A, 200 V. RDS(ON) = 0.125 @ VGS = 10 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
D
D
D
D
5 6
4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
200 ±20
(Note 1a)
Units
V V A W
3.0 20 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS2670 Device FDS2670 Reel Size 13’’ Tape width 12mm Quantity ……
