器件名称: FDS3570
功能描述: 80V N-Channel PowerTrench
文件大小: 250.58KB 共8页
简 介:FDS3570
May 1999 PRELIMINARY
FDS3570
80V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
9 A, 80 V. RDS(ON) = 0.019 @ VGS = 10 V RDS(ON) = 0.022 @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
D D
D
D
5 6 7
4 3 2 1
SO-8
Symbol
VDSS VGSS ID PD
S
S
S
G
8
Absolute Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
80 ±20
(Note 1a)
Units
V V A W
9 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking
FDS3570
Device
FDS3570
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS3570 Rev. B
FDS3570
Electrical Characteristics
Symbol
BVDSS……
