器件名称: FDS3670
功能描述: 100V N-Channel PowerTrench
文件大小: 204.16KB 共8页
简 介:FDS3670
January 2000 PRELIMINARY
FDS3670
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
6.3 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 V RDS(ON) = 0.033 @ VGS = 6 V. Low gate charge (57 nC typical). Fast switching speed High performance trench technology for extremely low RDS(ON) . High power and current handling capability.
D D
D
D
5 6 7
4 3 2 1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
100 ±20
(Note 1a)
Units
V V A W
6.3 50 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS3670
1999 Fairchild Semiconductor Corporation
Device FDS3670
Reel Si……
