器件名称: FMB175
功能描述: NPN SILICON RF POWER TRANSISTOR
文件大小: 17.9KB 共1页
简 介:FMB175
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI FMB175 is Designed for
PACKAGE STYLE .500 6L FLG FEATURES:
Omnigold Metalization System
D C A 2x N FULL R
B
E .725/18,42 F K M L MAXIMUM
inches / mm
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
G
20 A 65 V 36 V 65 V 4.0 V 270 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 0.7 C/W
O O O O
DIM A B C D E F G H I J K L M N
H MINIMUM
inches / mm
J
I
.150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81
.160 / 4.06
.220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18
.980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24
.120 / 3.05
.135 / 3.43
ORDER CODE: ASI10589
O
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVCEO BVEBO ICES hFE COB PG ηC
TC = 25 C
NONETEST CONDITIONS
IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 28 V VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 175 W IC = 5.0 A f = 1.0 MHz f = 108 MHz
MINIMUM TYPICAL MAXIMUM
65 65 35 4.0 15 20 200 200 10 65
UNITS
V V V V mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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