器件名称: FMB2222A
功能描述: NPN Multi-Chip General Purpose Amplifier
文件大小: 61.84KB 共5页
简 介:FFB2222A / FMB2222A / MMPQ2222A
Discrete POWER & Signal Technologies
FFB2222A
E2 B2 C1
FMB2222A
C2 E1 C1
MMPQ2222A
E2 B2 E3 B3 E4 B4
E1 C2 B1
pin #1
B1
B2 E2
pin #1 B1
E1
SC70-6
Mark: .1P
SuperSOT-6
Mark: .1P
SOIC-16
C1
C2 C1
C3 C2
C4 C4 C3
NPN Multi-Chip General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
40 75 6.0 500 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2222A 300 2.4 415
Max
FMB2222A 700 5.6 180 MMPQ2222A 1,000 8.0 125 240
Units
mW mW/°C °C/W °C/W °C/W
1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
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