器件名称: FMB-26
功能描述: Schottky Barrier Diodes 60V
文件大小: 39.81KB 共2页
简 介:Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
60V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g) 1 Chip A IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
VF (V)
max per element
trr
(ns) IF /IRP (mA)
max per element max per element
FMB-G16L FMB-26 FMB-26L FMB-36 FMB-36M
60
6.0 4.0 10.0 15.0 30.0
50 40 50 100 150 –40 to +150 0.62
5.0 2.0 5.0 7.5 15.0
5.0 1.0 2.5 5.0 10.0
50 20 50 75 2.0 150 5.5 100 100/100 4.0 2.1
B Center-tap C
FMB-G16L
6
Tc—IF(AV) Derating
VR =60V
D.C.
VF —I F Characteristics (Typical)
50 50
VR —I R Characteristics (Typical)
Ta = 125C
I FMS Rating
I FSM (A)
50
I FSM (A)
Average Forward Current I F (AV) (A)
Reverse Current IR (mA)
5
Forward Current IF (A)
10
10
100C
40
20ms
4 3
t /T = 1/6
Peak Forward Surge Current
60 70 80
1
1 60C 0.1 25C
30
t /T= 1/ 3
20
2
t /T = 1/2
0.1
1
Sinewave
0 60 80 100 120 140
0.01 0 0.2 0.4
Ta = 125C 100C 60C 26C 0.6 0.8 1.0 1.2 1.4
10
0.01 0.005
0
10
20
30
40
50
0
1
5
10
50
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage
VR (V)
Overcurrent Cycles
FMB-26
5
Tc—IF(AV) Derating
VR =60V
VF —I F Characteristics (Typical)
50 50
VR —I R Characteristics (Typical)
I FSM (A)
40
I FMS Rating
I FSM (A)
Average Forward Current I F (AV) (A)
Reverse Current IR (mA)
D.C.
Forward Current IF (A)
4
10
10
Ta = 125C ……
