器件名称: FMB-32
功能描述: Schottky Barrier Diodes 20V
文件大小: 44.9KB 共2页
简 介:Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
20V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Tj (°C)
Tstg (°C)
VF (V)
max per element
trr
(ns) IF /IRP (mA)
max per element max per element
FMB-G12L FMB-G22H
5.0 10.0
100 200 100
5.0 10.0 5.0 –40 to +150 0.47 7.5 10.0 10.0
2.0 5.0 2.0 3.0 5.0 10.0
35
1 Chip A
65 4.0 35 100 50 65 2.0 5.5 100 500/500
Centertap C B
2.1
FMB-22L
20
FMB-22H FMB-32 FMB-32M
15.0 20.0 30.0
150 200 300
FMB-G12L
5.0
Tc—IF(AV) Derating
t /T = 1/6
VR =20V
VF —IF Characteristics (Typical)
30 10 50
VR —IR Characteristics (Typical)
I FSM (A)
100
I FMS Rating
I FSM (A)
Average Forward Current I F (AV) (A)
D.C.
Ta = 125C
Reverse Current IR (mA)
Forward Current IF (A)
4.0
10 100C
80
20ms
3.0
t /T = 1/2 t /T= 1/ 3
1
Peak Forward Surge Current
Sinewave
1
60
60C
0.1
2.0
1.0
0.01
Ta = 125C 100C 60C 27C
40
0.1
27C
20
0
80
90
100
110
120
130
0.001
0.01 0.005 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0
5
10
15
20
25
30
35
0
1
5
10
50
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage
VR (V)
Overcurrent Cycles
FMB-G22H
Tc—IF(AV) Derating
10.0 VR =20V
VF —IF Characteristics (Typical)
50 200 100 10
VR —IR Characteristics (Typical)
I FSM (A)
200
I FMS Rating
I FSM (A)
Average Forward Current I F ……
