器件名称: FMBA06
功能描述: NPN Multi-Chip General Purpose Amplifier
文件大小: 53.43KB 共4页
简 介:FMBA06
Discrete POWER & Signal Technologies
FMBA06
C2 E1 C1
B2 E2
pin #1 B1
SuperSOT-6
Mark: .1G
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80 80 4.0 500 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
FMBA06 700 5.6 180
Units
mW mW/°C °C/W
1998 Fairchild Semiconductor Corporation
FMBA06
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)EBO ICEO ICBO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 Emitter-Base Breakdown Voltage Collector-Cutoff ……
