器件名称: FMBBAS21
功能描述: 200 mW EPITAXIAL PLANAR DIODES
文件大小: 60.48KB 共1页
简 介:Data Sheet
200 mW EPITAXIAL PLANAR DIODES
Mechanical Dimensions
.110 .060 .037 .115 .037 2 3 1 .016
Description
Pin 3 Pin 1 NC
Pin 2
.043 .004
.016
Features
n PLANAR PROCESS n 200 mW POWER DISSIPATION Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Forward Voltage...VF @ IF = 100 mA DC Reverse Current...IR Power Dissipation...PD Reverse Recovery Time...tRR Operating Temperature Range...TJ Storage Temperature Range...TSTRG @ VR = 70V
n INDUSTRY STANDARD SOT-23 PACKAGE n MEETS UL SPECIFICATION 94V-0 FMBBAS19...21 FMBBAS19 120 10 0 FMBBAS20 200 150 FMBBAS21 250 200 Volts Volts Units
............................................. 6 2 5 ............................................... mAmps ............................................. 2.5 ............................................... ............................................. 1.0 ............................................... ............................................. 0.1 ............................................... ............................................. 2 0 0 ............................................... ............................................. 5 0 ............................................... ......................................... -25 to 85 .......................................... ......................................... -65 to 150 .........……
