器件名称: FMBS549_06
功能描述: PNP Low Saturation Transistor
文件大小: 178.71KB 共5页
简 介:FMBS549 PNP Low Saturation Transistor
August 2006
FMBS549
PNP Low Saturation Transistor
Features
ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB.
tm
NC C1 E
B C pin #1 C
SuperSOTTM-6 single
Mark: .S1
Absolute Maximum Ratings *
Symbol
VCEO VCBO VEBO IC TJ TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Ta = 25°C unless otherwise noted
Parameter
Value
-30 -35 -5 -1 -2 150 - 55 ~ 150
Unit
V V V A A °C °C
Collector Current - Continuous - Peak Pulse Current Junction Temperature Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics *
Symbol
PD RθJA
Parameter
Total Device Dissipation, by RθJA Thermal Resistance, Junction to Ambient
Value
700 180
Unit
mW °C/W
* Device mounted on a 1 in2 pad of 2 oz copper.
2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMBS549 Rev. B
FMBS549 PNP Low Saturation Transistor
Electrical Characteristics*
Symbol
Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
-30 -35 -5.0
Max.
Units
V V V
Collector-Emitter Bre……
