器件名称: FQP10N60C_07
功能描述: 600V N-Channel MOSFET
文件大小: 1020.71KB 共10页
简 介:FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
April 2007
QFET
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
Features
9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
G G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
Parameter
FQP10N60C
9.5 5.7 38
FQPF10N60C
600 9.5 * 5.7 * 38 * ± 30
Units
V A A A V mJ A mJ V/ns
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
(Note 2) (Note 1) (Note 1) (Note 3)
700 9……
