器件名称: FQP16N25C
功能描述: 250V N-Channel MOSFET
文件大小: 1138.42KB 共10页
简 介:FQP16N25C/FQPF16N25C
QFET
FQP16N25C/FQPF16N25C
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Features
15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 68 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-220
FQP Series
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TO-220F
FQPF Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP16N25C 15.6 9.8 62.4
FQPF16N25C 250 15.6 * 9.8 * 62.4 * ± 30 410
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
(Note 2) (Note 1) (Note 1) (Note 3)
15.6 13.9 5.5 139 1.11 -55 to +150 300 43 0.34
- Derate above 25°C Operating and Storage……
