器件名称: FQPF10N20C
功能描述: 200V N-Channel MOSFET
文件大小: 875.37KB 共10页
简 介:FQP10N20C/FQPF10N20C
QFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
TM
Features
9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
●
▲
● ●
G! G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP10N20C 9.5 6.0 38
FQPF10N20C 200 9.5 * 6.0 * 38 * ± 30 210 9.5 7.2 5.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperat……
