器件名称: GS1332E
功能描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件大小: 246.98KB 共4页
简 介:Pb Free Plating Product
ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C
GS1332E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 600m 600mA
The GS1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D)
Description
Features
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Operating Junction and Storage Temperature Range
Ratings 20 ±5 600 470 2.5 0.35 0.003 -55 ~ +150 Value 360
Unit V V mA mA A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W
GS1332E
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ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 4 10 15 2 38 17 12 Max. 1.2 ±10 1 10 600 1200 2 60 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=5……
