器件名称: I772
功能描述: TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 223.36KB 共1页
简 介:DC COMPONENTS CO., LTD.
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I772
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver.
TO-251
.268(6.80) .252(6.40) .217(5.50) .205(5.20) 2
Pinning
1 = Base 2 = Collector 3 = Emitter
.022(0.55) .018(0.45) .063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC IC IB PD TJ TSTG
Rating -40 -30 -5 -3 -7 -600 10 +150 -55 to +150
Unit V V V A A mA W
o o
.284(7.20) .268(6.80) 1 .035 Max (0.90) 2 3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45)
.032 Max (0.80) .181 Typ (4.60) .095(2.40) .087(2.20)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380s, Duty Cycle 2%
Min -40 -30 -5 30 100 -
Typ -0.3 -1 80 55
Max -1 -1 -0.5 -2 500 -
Unit V V V A A V V MHz pF
Test Conditions IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-20mA, VCE=-2V IC=-1A, VCE=-2V IC=-0.1A, VCE=-5V, f=100MHz VCB=-10V, f=1MHz
Collector-Base Breakdown Volt……
