器件名称: LP6836P100
功能描述: Packaged 0.25W Power PHEMT
文件大小: 23.09KB 共2页
简 介:Filtronic
Solid State
FEATURES
LP6836P100
Packaged 0.25W Power PHEMT
GATE
+24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range
SOURCE
DRAIN
DESCRIPTION AND APPLICATIONS
The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 360 m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si3N4 passivation and is available in die form, or P70 packages. Packages are color-coded by IDSS range. Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, and medium-haul digital radio transmitters. The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (TA = 25°C)
SYMBOLS IDSS PARAMETERS Saturated Drain-Source Current VDS = 2V VGS = 0V LP6836-P100-1 Blue LP6836-P100-2 Green LP6836-P100-3 Red Output Power at 1dB Gain Compression f = 15 GHz VDS = 8.0V, IDS = 50% IDSS Power Gain at 1dB Gain Com……
