器件名称: IRF1010EZPBF
功能描述: AUTOMOTIVE MOSFET
文件大小: 285.31KB 共12页
简 介:PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
G
VDSS = 60V RDS(on) = 8.5m
S
Description
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A
TO-220AB IRF1010EZ
D2Pak IRF1010EZS
TO-262 IRF1010EZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current
Max.
84 60 75 340 140 0.90 ± 20 99 180 See Fig.12a,12b,15,16 -55 to + 175
Units
A
c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current
W W/°C V mJ A mJ °C
c
i
d
Repeti……
