器件名称: IRF1010ZSPBF
功能描述: HEXFET
文件大小: 359.06KB 共13页
简 介:PD - 95361
AUTOMOTIVE MOSFET
IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF
HEXFET Power MOSFET
D
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V RDS(on) = 7.5m
G S
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Description
ID = 75A
Absolute Maximum Ratings
TO-220AB IRF1010Z
D2Pak IRF1010ZS Max.
94 66 75 360 140
TO-262 IRF1010ZL Units
A
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM
PD @TC = 25°C Power Dissipation VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current
W W/°C V mJ A mJ
Single Pulse Avalanche Energy Tested Value Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Moun……
